| Atsushi SATO (Born: 1971) |
|
| Practice Area: |
| Semiconductors, their Processes and Devices |
| Digital Circuits |
| Material Science |
| Micro-machining |
|
|
| Education: |
Yokohama National University
(Faculty of Engineering, Department of Material Sciences, 1994; Graduate
School of Engineering, Division of Material Sciences, 1996) |
| Johnson Graduate School of Management, Cornell University (MBA, 2008) |
|
|
| Admission: |
| Japan Patent Attorneys Association (2003) |
|
|
| Experience: |
| Texas Instruments Japan Ltd. (1996-1998) |
| Tokyo Electron Limited (1998-1999) |
| Ryuka IP Law Firm (2000-2002) |
| TMI Associates (Associate, 2003-2008; Partner, 2009-Present) |
|
|
| Languages: |
|
|
| Memberships: |
| Japan Patent Attorneys Association |
|
|
| Publications: |
| -"Thermoelectric Properties of Boron and Boron Phosphide CVD Wafers,"
(Co-Author), Solid State Chemistry, October 1997, Volume 133, No.1 |
|
